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MSM512100 - 2097152-Word x 1-Bit DYNAMIC RAM

General Description

The MSM512100/L is a 2,097,152-word

1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology.

Key Features

  • 2,097,152-word.
  • 1-bit configuration.
  • Single 5 V power supply, ± 10% tolerance.
  • Input : TTL compatible, low input capacitance.
  • Output : TTL compatible, 3-state.
  • Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version).
  • Fast page mode, read modify write capability.
  • CAS before RAS refresh, hidden refresh, RAS-only refresh capability.
  • Multi-bit test mode capability.
  • Package: 26/20-pin 300 mil plastic SOJ (SOJ26.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com E2G0016-17-41 ¡ Semiconductor MSM512100/L ¡ Semiconductor This version: Jan. 1998 MSM512100/L Previous version: May 1997 2,097,152-Word ¥ 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM512100/L is a 2,097,152-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM512100/L achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMOS process. The MSM512100/L is available in a 26/20-pin plastic SOJ. The MSM512100L (the low-power version) is specially designed for lower-power applications.