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MSM56V16800E - 2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM

Description

The MSM56V16800E is a 2-bank 1,048,576-word

8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology.

The device operates at 3.3 V.

The inputs and outputs are LVTTL compatible.

Features

  • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 2-bank.
  • 1,048,576-word.
  • 8-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycles/64 ms Programmable data transfer mode.
  • CAS latency (1, 2, 3).
  • Burst length (1, 2, 4, 8, full page).
  • Data scramble (sequential, interleave).
  • CBR auto-refresh, Self.

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Datasheet preview – MSM56V16800E

Datasheet Details

Part number MSM56V16800E
Manufacturer OKI Electric
File Size 400.66 KB
Description 2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
Datasheet download datasheet MSM56V16800E Datasheet
Additional preview pages of the MSM56V16800E datasheet.

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Full PDF Text Transcription

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E2G1053-18-54 ¡ Semiconductor MSM56V16800E ¡ Semiconductor This version: Jul. 1998 MSM56V16800E 2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800E is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. FEATURES • • • • • • • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 2-bank ¥ 1,048,576-word ¥ 8-bit configuration 3.3 V power supply, ± 0.
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