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MSM56V16800F - 2-Bank x 1048576 Word x 8 Bit SYNCHRONOUS DYNAMIC RAM

Description

The MSM56V16800F is a 2-Bank ´ 1,048,576-word ´ 8 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology.

The device operates at 3.3V.

The inputs and outputs are LVTTL compatible.

Features

  • Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell 2-bank ´ 1,048,576-word ´ 8bit configuration 3.3V power supply ± 0.3V tolerance Input Output Refresh : LVTTL compatible : LVTTL compatible : 4096 cycles/64 ms Programmable data transfer mode - CAS Latency (1,2,3) - Burst Length (1,2,4,8,Full page) - Data scramble (sequential , interleave).
  • CBR auto-refresh, Self-refresh capability Package: 44-pin 400mil plastic TSOP (Type.

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Datasheet Details

Part number MSM56V16800F
Manufacturer OKI Electric
File Size 2.91 MB
Description 2-Bank x 1048576 Word x 8 Bit SYNCHRONOUS DYNAMIC RAM
Datasheet download datasheet MSM56V16800F Datasheet
Additional preview pages of the MSM56V16800F datasheet.

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Full PDF Text Transcription

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Semiconductor MSM56V16800F 2-Bank ´ 1,048,576 Word ´ 8 Bit SYNCHRONOUS DYNAMIC RAM This version : Dec.1999 DESCRIPTION The MSM56V16800F is a 2-Bank ´ 1,048,576-word ´ 8 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL compatible. FEATURES · · · · · · · Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell 2-bank ´ 1,048,576-word ´ 8bit configuration 3.3V power supply ± 0.
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