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  ON Semiconductor Electronic Components Datasheet  

MCR106-6 Datasheet

Sensitive Gate Silicon Controlled Rectifiers

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MCR106-6, MCR106-8
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume consumer applications
such as temperature, light and speed control; process and remote control,
and warning systems where reliability of operation is important.
Features
Glass-Passivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
PbFree Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive OffState Voltage (Note 1) VDRM,
V
(TJ = 40 to 110°C, Sine Wave 50 to 60
VRRM
Hz, RGK = 1 kW) MCR1066
400
MCR1068
600
On-State RMS Current, (TC = 93°C)
(180° Conduction Angles)
IT(RMS)
4.0
A
Average OnState Current,
(180° Conduction Angles; TC = 93°C)
IT(AV)
2.55
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)
Circuit Fusing Considerations, (t = 8.3 ms)
ITSM
I2t
25
A
2.6
A2s
Forward Peak Gate Power,
(TC = 93°C, Pulse Width v 1.0 ms)
PGM
0.5
W
Forward Average Gate Power,
(TC = 93°C, t = 8.3 ms)
PG(AV)
0.1
W
Forward Peak Gate Current,
(TC = 93°C, Pulse Width v 1.0 ms)
IGM
0.2
A
Peak Reverse Gate Voltage,
(TC = 93°C, Pulse Width v 1.0 ms)
VRGM
6.0
V
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (Note 2)
TJ
40 to +110 °C
Tstg 40 to +150 °C
6.0
in. lb.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200-F006 or
equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are
common. (See AN209B). For soldering purposes (either terminal connection
or device mounting), soldering temperatures shall not exceed +200°C. For
optimum results, an activated flux (oxide removing) is recommended.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCRs
4 AMPERES RMS
400 thru 600 VOLTS
G
A
K
32 1
TO225AA
CASE 77
STYLE 2
MARKING DIAGRAM
YWW
CR
106xG
Y
= Year
WW
= Work Week
CR106x = Device Code
x = 6 or 8
G
= PbFree Package
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2008
1
November, 2008 Rev. 5
Publication Order Number:
MCR106/D


  ON Semiconductor Electronic Components Datasheet  

MCR106-6 Datasheet

Sensitive Gate Silicon Controlled Rectifiers

No Preview Available !

MCR1066, MCR1068
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RqJC
RqJA
TL
Max
Unit
3.0
°C/W
75
°C/W
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM; RGK = 1 kW)
ON CHARACTERISTICS
TJ = 25°C
TJ = 110°C
Peak Forward OnState Voltage (Note 3)
(ITM = 4 A Peak)
Gate Trigger Current (Continuous dc) (Note 4)
(VAK = 7 Vdc, RL = 100 W)
(TC = 40°C)
Gate Trigger Voltage (Continuous dc) (Note 4)
(VAK = 7 Vdc, RL = 100 W)
Gate Non-Trigger Voltage (Note 4)
(VAK = 12 Vdc, RL = 100 W, TJ = 110°C)
Holding Current
(VAK = 7 Vdc, Initiating Current = 200 mA, RGK = 1 kW)
DYNAMIC CHARACTERISTICS
Critical RateofRise of OffState Voltage
(TJ = 110°C, RGK = 1 kW)
3. Pulse Test: Pulse Width 1.0 ms, Duty Cycle 1%.
4. RGK current is not included in measurement.
ORDERING INFORMATION
Device
MCR1066
MCR1066G
MCR1068
MCR1068G
Package
TO225AA
TO225AA
(PbFree)
TO225AA
TO225AA
(PbFree)
Symbol
Min Typ Max Unit
IDRM, IRRM
10
mA
200
mA
VTM
2.0
V
IGT
mA
200
500
VGT
1.0
V
VGD
0.2
V
IH
5.0
mA
dv/dt
10
V/ms
Shipping
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
http://onsemi.com
2


Part Number MCR106-6
Description Sensitive Gate Silicon Controlled Rectifiers
Maker ON
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MCR106-6 Datasheet PDF






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