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  ON Semiconductor Electronic Components Datasheet  

MCR12N Datasheet

Silicon Controlled Rectifiers

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MCR12D, MCR12M, MCR12N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave silicon gate–controlled devices are needed.
Blocking Voltage to 800 Volts
On–State Current Rating of 12 Amperes RMS at 80°C
High Surge Current Capability — 100 Amperes
Rugged, Economical TO220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT an IH Specified for
Ease of Design
High Immunity to dv/dt — 100 V/µsec Minimum at 125°C
Device Marking: Logo, Device Type, e.g., MCR12D, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR12D
MCR12M
MCR12N
VDRM,
VRRM
400
600
800
Unit
Volts
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
IT(RMS)
12
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
Circuit Fusing Consideration
(t = 8.33 ms)
ITSM
I2t
100 A
41 A2sec
Forward Peak Gate Power
(Pulse Width 1.0 µs, TC = 80°C)
PGM
5.0 Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV) 0.5 Watts
Forward Peak Gate Current
(Pulse Width 1.0 µs, TC = 80°C)
Operating Junction Temperature Range
IGM
TJ
2.0
– 40 to
+125
A
°C
Storage Temperature Range
Tstg
– 40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
http://onsemi.com
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
G
AK
4
1
2
3
TO–220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR12D
TO220AB
50 Units/Rail
MCR12M
TO220AB
50 Units/Rail
MCR12N
TO220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 1999
December, 1999 – Rev. 2
1
Publication Order Number:
MCR12/D


  ON Semiconductor Electronic Components Datasheet  

MCR12N Datasheet

Silicon Controlled Rectifiers

No Preview Available !

MCR12D, MCR12M, MCR12N
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
RθJC
RθJA
TL
Min
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM and VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
Peak Forward On–State Voltage* (ITM = 24 A)
Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 )
Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current (VD = 12 V, IG = 20 mA)
Gate Trigger Voltage (Continuous dc) (VD = 12 V; RL =100 )
DYNAMIC CHARACTERISTICS
VTM
IGT
IH
IL
VGT
2.0
4.0
6.0
0.5
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Repetitive Critical Rate of Rise of On–State Current
IPK = 50 A, Pw = 40 µsec, diG/dt = 1 A/µsec, Igt = 50 mA
v v*Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
dv/dt
di/dt
100
Value
2.2
62.5
260
Unit
°C/W
°C
Typ Max Unit
mA
— 0.01
— 2.0
— 2.2 Volts
8.0 20 mA
20 40 mA
25 60 mA
0.65 1.0 Volts
250 — V/µs
— 50 A/µs
http://onsemi.com
2


Part Number MCR12N
Description Silicon Controlled Rectifiers
Maker ON
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MCR12N Datasheet PDF






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