MJ11030 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

Key Features

High DC Current Gain.
hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc.
Curves to 100 A (Pulsed).
Diode Protection to Rated IC.
Monolithic Construction with Built.
In Base.
Emitter Shunt Resistor.
Junction Temperature to + 200_C.
Pb.
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MJ11030 complementary silicon darlington power transistors by ON - Datasheet Preview

Datasheet Details

Part number	MJ11030
Manufacturer	ON
File Size	116.12 KB
Description	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Datasheet	MJ11030 Datasheet

Full PDF Text Transcription for MJ11030 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MJ11030. For precise diagrams, and layout, please refer to the original PDF.

MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for u...

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sistors High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.

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