MJE803 transistors equivalent, darlington power transistors.
http://onsemi.com
* High DC Current Gain − hFE = 2000 (Typ) @ IC
*
*
*
= 2.0 Adc Monolithic Construction with Built−in Base−Emitter Resistors to Limit L.
Features
http://onsemi.com
* High DC Current Gain − hFE = 2000 (Typ) @ IC
*
*
*
= 2.0 Adc Monolithic .
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