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  ON Semiconductor Electronic Components Datasheet  

MMQA33VT3 Datasheet

SC-74 Quad Monolithic Common Anode

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MMQA Quad Common
Anode Series
Preferred Devices
SC−74 Quad Monolithic
Common Anode
Transient Voltage Suppressors
for ESD Protection
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
Specification Features:
SC−74 Package Allows Four Separate Unidirectional Configurations
Peak Power − Min. 24 W @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
Peak Power − Min. 150 W @ 20 ms (Unidirectional),
per Figure 6 Waveform
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 2.0 mA
ESD Rating of Class N (exceeding 16 kV) per the
Human Body Model
Pb−Free Packages are Available
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1)
@ TA 25°C
Peak Power Dissipation @ 20 ms (Note 2) @
TA 25°C
Total Power Dissipation on FR-5 Board
(Note 3) @ TA = 25°C
Thermal Resistance from Junction−to−Ambi-
ent
Ppk
Ppk
°PD°
RqJA
24 W
150 W
°225
1.8
556
°mW°
mW/°C
°C/W
Total Power Dissipation on Alumina Sub-
strate (Note 4) @ TA = 25°C
Derate above 25°C
°PD°
°300 °mW
2.4 mW/°C
Thermal Resistance from Junction−to−Ambi-
ent
RqJA
417 °C/W
Junction and Storage Temperature Range
TJ, Tstg °− 55 to
+150°
°C
Lead Solder Temperature − Maximum (10
Second Duration)
TL 260 °C
http://onsemi.com
SC−74 QUAD TRANSIENT
VOLTAGE SUPPRESSOR
24 WATTS PEAK POWER
5.6 − 33 VOLTS
6
1
SC−74
PLASTIC
CASE 318F
PIN ASSIGNMENT
16
25
34
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE
MARKING DIAGRAM
xxx
xxx = Device Code
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the table on
page 5 of this data sheet.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 4
1
Publication Order Number:
MMQA/D


  ON Semiconductor Electronic Components Datasheet  

MMQA33VT3 Datasheet

SC-74 Quad Monolithic Common Anode

No Preview Available !

MMQA Quad Common Anode Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (VF = 0.9 V Max @ IF = 10 mA)
Device
Breakdown Voltage
VZT
(Note 5)
(V)
@ IZT
Min Nom Max (mA)
Max
Reverse
Leakage
Current
IR VR
(nA) (V)
Max Zener
Impedance
(Note 7)
ZZT @ IZT
(W) (mA)
Max
Reverse
Surge
Current
IRSM
(A)
Max
Reverse
Voltage @
IRSM
(Note 6)
(Clamping
Voltage)
VRSM
(V)
Maximum
Temperature
Coefficient
of VZ
(mV/°C)
Capacitance
@ 0 Volt
Bias, 1 MHz
(pF)
Min Max
MMQA5V6T1,T3 5.32 5.6 5.88 1.0 2000 3.0
400
3.0
8.0
1.26 − −
MMQA6V2T1,T3 5.89 6.2 6.51 1.0 700 4.0
300
2.66
9.0
10.6 − −
MMQA6V8T1,T3 6.46 6.8 7.14 1.0 500 4.3
300
2.45
9.8
10.9 100 250
MMQA12VT1,T3 11.4 12 12.6 1.0 75 9.1
80
1.39 17.3
14 − −
MMQA13VT1
12.4 13 13.7 1.0 75 9.8
80
1.29 18.6
15 − −
MMQA15VT1,T3 14.3 15 15.8 1.0 75 11
80
1.1 21.7
16 − −
MMQA18VT1,T3 17.1 18 18.9 1.0 75 14
80
0.923
26
19 − −
MMQA20VT1,T3 19 20 21 1.0 75 15
80
0.84 28.6
20.1 − −
MMQA21VT1,T3 20
21 22.1 1.0 75 16
80
0.792
30.3
21 − −
MMQA22VT1,T3 20.9 22 23.1 1.0 75 17
80
0.758
31.7
22 − −
MMQA24VT1,T3 22.8 24 25.2 1.0 75 18
100
0.694
34.6
25 − −
MMQA27VT1,T3 25.7 27 28.4 1.0 75 21
125
0.615
39
28 − −
MMQA30VT1,T3 28.5 30 31.5 1.0 75 23
150
0.554
43.3
32 − −
MMQA33VT1,T3 31.4 33 34.7 1.0 75 25
200
0.504
48.6
37 − −
1. Non-repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 4.
2. Non-repetitive current pulse per Figure 6 and derate above TA = 25°C per Figure 4.
3. FR-5 = 1.0 x 0.75 x 0.62 in.
4. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
5. VZ measured at pulse test current IT at an ambient temperature of 25°C.
6. Surge current waveform per Figure 5 and derate per Figure 4.
7. ZZT is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are IZ(AC) = 0.1 IZ(DC),
with AC frequency = 1 kHz.
TYPICAL CHARACTERISTICS
300 10,000
250 BIASED AT 0 V
BIASED AT 1 V
1,000
200 BIASED AT 50%
OF VZ NOM
150 100
100
10
50
+150°C
+25°C
−40°C
0
5.6 6.8 12 20 27
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Typical Capacitance
33
0
5.6 6.8 20 27
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Typical Leakage Current
33
http://onsemi.com
2


Part Number MMQA33VT3
Description SC-74 Quad Monolithic Common Anode
Maker ON
Total Page 6 Pages
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