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NDP04N50Z, NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W
Features
• • • •
Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant
VDSS 500 V
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RDS(on) (MAX) @ 1.5 A 2.7 W
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 3.4 A ESD (HBM) (JESD22−A114) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd dv/dt IS TL TJ, Tstg 3.4 2.1 14 75 ±30 120 2800 4.5 (Note 1) 3.
04N50Z Datasheet
