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  ON Semiconductor Electronic Components Datasheet  

15C01M Datasheet

Bipolar Transistor

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Ordering number : EN7505A
15C01M
Bipolar Transistor
15V, 0.7A, Low VCE(sat) NPN Single MCP
http://onsemi.com
Applications
Low-frequency Amplier, muting circuit
Features
Large current capacity
Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58Ω [IC=0.7A, IB=35mA]
Ultrasmall package facilitates miniaturization in end products
Small ON-resistance (Ron)
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature
Tstg
Conditions
Mounted on a glass epoxy board (20×30×1.6mm)
Ratings
20
15
5
700
1.4
300
150
--55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7023A-009
2.0 0.15
3
15C01M-TL-E
Product & Package Information
• Package
: MCP
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
0 to 0.08
12
0.65 0.3
1 : Base
2 : Emitter
3 : Collector
MCP
TL
Electrical Connection
3
1
LOT No.
YP
LOT No.
2
Semiconductor Components Industries, LLC, 2013
August, 2013
92612 TKIM/O3003 TSIM TA-3683 No.7505-1/6


  ON Semiconductor Electronic Components Datasheet  

15C01M Datasheet

Bipolar Transistor

No Preview Available !

15C01M
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=15V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=10mA
VCE=2V, IC=50mA
VCB=10V, f=1MHz
IC=200mA, IB=10mA
IC=200mA, IB=10mA
IC=10μA, IE=0A
IC=1mA, RBE=
IE=10μA, IC=0A
See specied Test Circuit.
Ordering Information
Device
15C01M-TL-E
Package
MCP
Shipping
3,000pcs./reel
Ratings
min typ
300
330
3.2
150
0.9
20
15
5
30
77
40
max
0.1
0.1
800
300
1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
ns
ns
ns
memo
Pb Free
200
180
160
140
120
100
80
60
40
20
0
0
1000
7
5
3
2
IC -- VCE
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
IB=0mA
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Collector-to-Emitter Voltage, VCE -- V IT05490
hFE -- IC
VCE=2V
25°C
Ta=75°C
--25°C
100
7
5
3
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA
IT05492
800
700
600
500
400
300
200
100
0
0
1000
7
5
3
2
IC -- VBE
VCE=2V
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT05491
VCE(sat) -- IC
IC / IB=20
100
7
5
Ta=75°C--25°C
3 25°C
2
10
1.0
2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA
IT05493
No.7505-2/6


Part Number 15C01M
Description Bipolar Transistor
Maker ON Semiconductor
Total Page 6 Pages
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