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15GN01CA - RF Transistor

Key Features

  • Small ON-resistance [Ron=2Ω (IB=3mA)].
  • Small output capacitance [Cob=1.2pF (VCB=10V)] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions Ratings 15 8 3 50 200 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the devi.

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Datasheet Details

Part number 15GN01CA
Manufacturer onsemi
File Size 211.70 KB
Description RF Transistor
Datasheet download datasheet 15GN01CA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1098A 15GN01CA RF Transistor 8V, 50mA, fT=1.5GHz, NPN Single CP http://onsemi.com Features • Small ON-resistance [Ron=2Ω (IB=3mA)] • Small output capacitance [Cob=1.2pF (VCB=10V)] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions Ratings 15 8 3 50 200 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.