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  ON Semiconductor Electronic Components Datasheet  

18N50 Datasheet

N-Channel MOSFET

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FDP18N50 / FDPF18N50 / FDPF18N50T
N-Channel UniFETTM MOSFET
500 V, 18 A, 265 mΩ
Features
• RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A
Description
• Low Gate Charge (Typ. 45 nC)
• Low Crss (Typ. 25 pF)
• 100% Avalanche Tested
Applications
• LCD/LED/PDP TV
• Lighting
UniFETTM MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
• Uninterruptible Power Supply
D
GDS
TO-220
GDS
G
TO-220F
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
FDP18N50
FDPF18N50 /
FDPF18N50T
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
18
18 *
10.8
10.8 *
72
72 *
±30
945
18
23.5
4.5
PD
TJ, TSTG
TL
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
235
38.5
1.88
0.3
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDP18N50
0.53
62.5
FDPF18N50 /
FDPF18N50T
3.3
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2012 Semiconductor Components Industries, LLC.
November-2017, Rev 3
Publication Order Number:
FDPF18N50T/D


  ON Semiconductor Electronic Components Datasheet  

18N50 Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Part Number
FDP18N50
FDPF18N50
FDPF18N50T
Top Mark
FDP18N50
FDPF18N50
FDPF18N50T
Package
TO-220
TO-220F
TO-220F
Packing Method
Tube
Tube
Tube
Reel Size
N/A
N/A
N/A
Tape Width
N/A
N/A
N/A
Quantity
50 units
50 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 9 A
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 9 A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 250 V, ID = 18 A,
VGS = 10 V, RG = 25 Ω
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 400 V, ID = 18 A,
VGS = 10 V
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 18 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 18 A,
dIF/dt =100 A/μs
Min.
500
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ. Max Unit
--
--
V
0.5
--
V/°C
--
1
μA
--
10
μA
--
100 nA
--
-100 nA
--
5.0
V
0.220 0.265 Ω
25
--
S
2200 2860 pF
330 430 pF
25
40
pF
55
120
ns
165
340
ns
95
200
ns
90
190
ns
45
60
nC
12.5
--
nC
19
--
nC
--
18
A
--
72
A
--
1.4
V
500
--
ns
5.4
--
μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 5.2 mH, IAS = 18 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 18 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
2


Part Number 18N50
Description N-Channel MOSFET
Maker ON Semiconductor
PDF Download

18N50 Datasheet PDF






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