1HN04CH - Power MOSFET

ON Semiconductor

Datasheet Details

4V drive.
Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) 100 20 270 1080 0.6 150 V V mA mA W C Storage Temperature Tstg This product is designed to “ESD immunity < 200V.
”, so p.

📁 1HN04CH Similar Datasheet

Other Datasheets by ON Semiconductor

Published: Sep 23, 2016 |