1N4454 Datasheet | onsemi

DATA SHEET .onsemi. High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201- 1205 for characteristics. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Notes 1, 2, 3) Symbol Rating Value Unit WIV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 ms 200 m A 400 m A 600 m A A 1.0 4.0 TSTG Storage Temperature Range - 65 to +200 °C Operating Junction Temperature °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are limiting values above which the serviceability of any semiconductor devices may be impaired. 2. These ratings are based on a maximum junction temperature of 200°C. 3. These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. THERMAL CHARACTERISTICS Symbol Parameter Max Unit Total Power Dissipation Derate above 25°C 500 m W 3.33 m W/°C Rq JA Thermal Resistance, Junction to Ambient °C/W AXIAL LEAD (DO-...