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  ON Semiconductor Electronic Components Datasheet  

20P03HL Datasheet

Power MOSFET

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MTD20P03HDL
Preferred Device
Power MOSFET
20 Amps, 30 Volts, Logic Level
P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Pb−Free Packages are Available
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
90 mW@5.0 V
ID MAX
20 A
(Note 1)
P−Channel
D
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MW)
Gate−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous
− Continuous @ 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TC = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
30 Vdc
30 Vdc
"15
"20
Vdc
Vpk
19
12
57
75
0.6
1.75
−55 to
150
Adc
Apk
W
W/°C
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 19 Apk, L = 1.1 mH, RG = 25 W)
EAS 200 mJ
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
1.67
100
71.4
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR−4 board using the minimum recommended
pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
4
12
3
DPAK
CASE 369C
STYLE 2
S
MARKING DIAGRAMS
1 Gate
2 Drain
3 Source
YWW
20P
03HLG
4
1
2
3
DPAK
CASE 369D
STYLE 2
1 Gate
2 Drain
3 Source
YWW
20P
03HLG
Y
WW
20P03HL
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 7
1
Publication Order Number:
MTD20P03HDL/D


  ON Semiconductor Electronic Components Datasheet  

20P03HL Datasheet

Power MOSFET

No Preview Available !

MTD20P03HDL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
(Cpk 2.0) (Note 5)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk 2.0) (Note 5)
Static Drain−to−Source On−Resistance
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 9.5 Adc)
(Cpk 2.0) (Note 5)
Drain−to−Source On−Voltage (VGS = 5.0 Vdc)
(ID = 19 Adc)
(ID = 9.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 8.0 Vdc, ID = 9.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 15 Vdc, ID = 19 Adc,
VGS = 5.0 Vdc, RG = 1.3 W)
Fall Time
Gate Charge
(See Figure 8)
(VDS = 24 Vdc, ID =19 Adc,
VGS = 5.0 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(Cpk 2.0) (Note 5)
(IS = 19 Adc, VGS = 0 Vdc)
(IS = 19 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(See Figure 15)
(IS = 19 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperature.
5. Reflects typical values. Cpk = Absolute Value of Spec (Spec−AVG/3.516 mA).
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
Min Typ Max Unit
Vdc
30 − −
− 15 − mV/°C
mAdc
− − 10
− − 100
− − 100 nAdc
Vdc
1.0 1.5 2.0
− 4.0 − mV/°C
mW
− 120 −
90 99
Vdc
− 0.94 2.2
− − 1.9
5.0 6.0 − mhos
− 770 1064 pF
− 360 504
− 130 182
− 18 25.2 ns
− 178 246.4
− 21 26.6
− 72 98
− 15 22.4 nC
− 3.0 −
− 11 −
− 8.2 −
Vdc
− 3.1 3.4
− 2.56 −
− 78 − ns
− 50 −
− 28 −
0.209
mC
nH
− 4.5 −
nH
− 7.5 −
http://onsemi.com
2


Part Number 20P03HL
Description Power MOSFET
Maker ON Semiconductor
Total Page 9 Pages
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