
	ON Semiconductor Electronic Components Datasheet

2N4124 Datasheet

General Purpose Transistors

No Preview Available !

2N4123, 2N4124

General Purpose

Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Symbol

2N4123

2N4124

VCEO

Value

Unit

Vdc

Collector−Base Voltage

2N4123

2N4124

VCBO

Vdc

Emitter−Base Voltage

Collector Current − Continuous

Total Device Dissipation @ TA = 25°C

Derate above 25°C

VEBO

5.0 Vdc

200 mAdc

625 mW

5.0 mW/°C

Total Device Dissipation @ TC = 25°C PD 1.5 W

Derate above 25°C

12 mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient RqJA

200 °C/W

Thermal Resistance, Junction−to−Case

RqJC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

http://onsemi.com

COLLECTOR

BASE

EMITTER

TO−92

CASE 29

STYLE 1

123

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

MARKING DIAGRAM

MPS

412x

AYWW G

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

March, 2007 − Rev. 3

x = 3 or 4

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device

Package

Shipping†

2N4123RLRM TO−92 2000 / Tape & Ammo

2N4124G

TO−92

5000 Units / Bulk

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

2N4123/D


	ON Semiconductor Electronic Components Datasheet

2N4124 Datasheet

General Purpose Transistors

No Preview Available !

2N4123, 2N4124

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

OFF CHARACTERISTICS

Characteristic

Symbol

Min Max

Unit

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IE = 0)

V(BR)CEO

Vdc

2N4123

30 −

2N4124

25 −

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

Vdc

2N4123

40 −

2N4124

30 −

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

ON CHARACTERISTICS

V(BR)EBO

5.0

−

Vdc

ICBO

nAdc

− 50

IEBO

nAdc

− 50

DC Current Gain (Note 1)

(IC = 2.0 mAdc, VCE = 1.0 Vdc)

2N4123

2N4124

hFE

50 150

120 360

−

(IC = 50 mAdc, VCE = 1.0 Vdc)

Collector−Emitter Saturation Voltage (Note 1)

(IC = 50 mAdc, IB = 5.0 mAdc)

Base−Emitter Saturation Voltage (Note 1)

(IC = 50 mAdc, IB = 5.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Collector−Base Capacitance

(IE = 0, VCB = 5.0 V, f = 1.0 MHz)

Small−Signal Current Gain

(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz)

Current Gain − High Frequency

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

2N4123

2N4124

VCE(sat)

VBE(sat)

25 −

60 −

Vdc

− 0.3

Vdc

− 0.95

2N4123

2N4124

2N4123

2N4124

2N4123

2N4124

Cibo

Ccb

hfe

|hfe|

250 −

300 −

− 8.0

− 4.0

50 200

120 480

2.5 −

3.0 −

MHz

−

(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

2N4123

2N4124

2N4123

2N4124

50 200

120 480

− 6.0

− 5.0

http://onsemi.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf

2N4124 Datasheet

General Purpose Transistors

2N4124 Datasheet

General Purpose Transistors

Similar Datasheet

Part Number Start With