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2N4402 Datasheet

General Purpose Transistors(PNP Silicon)

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N4402/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
2N4402
2N4403*
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40
40
5.0
600
625
5.0
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
40 — Vdc
40 — Vdc
5.0 — Vdc
— 0.1 µAdc
— 0.1 µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1


  ON Semiconductor Electronic Components Datasheet  

2N4402 Datasheet

General Purpose Transistors(PNP Silicon)

No Preview Available !

2N4402 2N4403
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
2N4403
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N4402
2N4403
Symbol
hFE
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N4402
2N4403
(IC = 150 mAdc, VCE = 2.0 Vdc)(1)
2N4402
2N4403
(IC = 500 mAdc, VCE = 2.0 Vdc)(1)
Collector – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Both
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
2N4402
2N4403
Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4402
2N4403
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4402
2N4403
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 30 Vdc, VBE = + 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mA, IB2 = 15 mA)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
VCE(sat)
VBE(sat)
fT
Ccb
Ceb
hie
hre
hfe
hoe
td
tr
ts
tf
Min
30
30
60
50
100
50
100
20
0.75
150
200
750
1.5 k
0.1
30
60
1.0
Max Unit
150
300
Vdc
0.4
0.75
Vdc
0.95
1.3
8.5
30
7.5 k
15 k
8.0
250
500
100
MHz
pF
pF
ohms
X 10–4
µmhos
15 ns
20 ns
225 ns
30 ns
+2 V
0
– 16 V
2
SWITCHING TIME EQUIVALENT TEST CIRCUIT
< 2 ns
1.0 k
10 to 100 µs,
DUTY CYCLE = 2%
– 30 V
200
< 20 ns
+14 V
CS* < 10 pF
0
–16 V
1.0 k
1.0 to 100 µs,
Scope rise time < 4.0 ns
DUTY CYCLE = 2% + 4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
– 30 V
200
CS* < 10 pF
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number 2N4402
Description General Purpose Transistors(PNP Silicon)
Maker ON Semiconductor
Total Page 6 Pages
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