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  ON Semiconductor Electronic Components Datasheet  

2N4918 Datasheet

GENERAL.PURPOSE POWER TRANSISTORS

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2N4918 - 2N4920 Series
Medium-Power Plastic PNP
Silicon Transistors
These mediumpower, highperformance plastic devices are
designed for driver circuits, switching, and amplifier applications.
Features
Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A
Excellent Power Dissipation, PD = 30 W @ TC = 25_C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 A
Complement to NPN 2N4921, 2N4922, 2N4923
PbFree Package is Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
Vdc
2N4918
40
2N4919
60
2N4920
80
Collector Base Voltage
VCBO
Vdc
2N4918
40
2N4919
60
2N4920
80
Emitter Base Voltage
Collector Current Continuous
(Note 1)
VEBO
5.0
Vdc
IC
1.0
Adc
(Note 2)
3.0
Base Current
IB
Total Power Dissipation @ TA = 25°C
PD
Derate above 25°C
1.0
Adc
30
W
0.24
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. The 1.0 A max IC value is based upon JEDEC current gain requirements. The
3.0 A max value is based upon actual currenthandling capability of the
device (See Figure 5).
2. Indicates JEDEC Registered Data for 2N4918 Series.
THERMAL CHARACTERISTICS (Note 3)
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoCase
qJC
4.16
°C/W
3. Recommend use of thermal compound for lowest thermal resistance.
http://onsemi.com
3.0 A, 4080 V, 30 W
GENERAL PURPOSE
POWER TRANSISTORS
4
123
FRONT VIEW
321
BACK VIEW
TO225
CASE 077
STYLE 1
MARKING DIAGRAM
YWW
2N
49xx
xx
= 18, 19, 20
Y
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
1
January, 2017 Rev. 12
Publication Order Number:
2N4918/D


  ON Semiconductor Electronic Components Datasheet  

2N4918 Datasheet

GENERAL.PURPOSE POWER TRANSISTORS

No Preview Available !

2N4918 2N4920 Series
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CollectorEmitter Sustaining Voltage (Note 4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 0.1 Adc, IB = 0)
2N4918
2N4919
2N4920
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 20 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 40 Vdc, IB = 0)
2N4918
2N4919
2N4920
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = Rated VCEO, VBE(off) = 1.5 Vdc)
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (Note 4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.0 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CollectorEmitter Saturation Voltage (Note 4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.0 Adc, IB = 0.1 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BaseEmitter Saturation Voltage (Note 4)
(IC = 1.0 Adc, IB = 0.1 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BaseEmitter On Voltage (Note 4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.0 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SMALLSIGNAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CurrentGain Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SmallSignal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Symbol
Min
VCEO(sus)
40
60
80
ICEO
ICEX
ICBO
IEBO
Max
Unit
Vdc
mAdc
0.5
0.5
0.5
mAdc
0.1
0.5
0.1
mAdc
1.0
mAdc
hFE
40
30
150
10
VCE(sat)
0.6
Vdc
VBE(sat)
1.3
Vdc
VBE(on)
1.3
Vdc
fT
3.0
MHz
Cob
100
pF
hfe
25
4. Pulse Test: PW [ 300 ms, Duty Cycle [ 2.0%
ORDERING INFORMATION
Device
Package
Shipping
2N4918
TO225
500 Unit / Bulk
2N4919
TO225
500 Unit / Bulk
2N4920
TO225
500 Unit / Bulk
2N4920G
TO225
(PbFree)
500 Unit / Bulk
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
www.onsemi.com
2


Part Number 2N4918
Description GENERAL.PURPOSE POWER TRANSISTORS
Maker ON Semiconductor
PDF Download

2N4918 Datasheet PDF






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