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  ON Semiconductor Electronic Components Datasheet  

2N4919 Datasheet

GENERAL.PURPOSE POWER TRANSISTORS

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ON Semiconductor)
Medium-Power Plastic PNP
Silicon Transistors
. . . designed for driver circuits, switching, and amplifier
applications. These high–performance plastic devices feature:
Low Saturation Voltage —
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation Due to Thermopad Construction —
PD = 30 W @ TC = 25_C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement to NPN 2N4921, 2N4922, 2N4923
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRatings
Symbol 2N4918 2N4919 2N4920 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
VCEO
40
60
80 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
VCB
40
60
80 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
VEB
5.0 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous (1)
IC*
1.0 Adc
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25°C
Derate above 25_C
IB
PD
1.0 Adc
30 Watts
0.24 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating & Storage Junction
Temperature Range
TJ, Tstg
–65 to +150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
θJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data for 2N4918 Series.
Max Unit
4.16 _C/W
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current–handling capability of the
device (See Figure 5).
(2) Recommend use of thermal compound for lowest thermal resistance.
2N4918
thru
2N4920*
*ON Semiconductor Preferred Device
3 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40–80 VOLTS
30 WATTS
321
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77–09
TO–225AA TYPE
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 10
1
Publication Order Number:
2N4918/D


  ON Semiconductor Electronic Components Datasheet  

2N4919 Datasheet

GENERAL.PURPOSE POWER TRANSISTORS

No Preview Available !

2N4918 thru 2N4920
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
http://onsemi.com
2


Part Number 2N4919
Description GENERAL.PURPOSE POWER TRANSISTORS
Maker ON Semiconductor
Total Page 8 Pages
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