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  ON Semiconductor Electronic Components Datasheet  

2N5063 Datasheet

Sensitive Gate Silicon Controlled Rectifiers

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2N5060 Series
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO92/TO-226AA package which
is readily adaptable for use in automatic insertion equipment.
Features
Sensitive Gate Trigger Current 200 mA Maximum
Low Reverse and Forward Blocking Current 50 mA Maximum,
TC = 110°C
Low Holding Current 5 mA Maximum
Passivated Surface for Reliability and Uniformity
These are PbFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive OffState Voltage (Note 1)
(TJ = *40 to 110°C, Sine Wave,
50 to 60 Hz, RGK = 1 kW)
2N5060
2N5061
2N5062
2N5064
VDRM,
VRRM
30
60
100
200
V
On-State Current RMS (180° Conduction
Angles; TC = 80°C)
*Average On-State Current
(180° Conduction Angles)
(TC = 67°C)
(TC = 102°C)
*Peak Non-repetitive Surge Current,
TA = 25°C (1/2 cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
IT(AV)
ITSM
I2t
0.8
0.51
0.255
10
0.4
A
A
A
A2s
*Average On-State Current
(180° Conduction Angles)
(TC = 67°C)
(TC = 102°C)
*Forward Peak Gate Power (Pulse Width v
1.0 msec; TA = 25°C)
*Forward Average Gate Power
(TA = 25°C, t = 8.3 ms)
*Forward Peak Gate Current (Pulse Width
v 1.0 msec; TA = 25°C)
*Reverse Peak Gate Voltage (Pulse Width
v 1.0 msec; TA = 25°C)
*Operating Junction Temperature Range
IT(AV)
PGM
PG(AV)
IGM
VRGM
TJ
0.51
0.255
0.1
0.01
1.0
5.0
40 to
+110
A
W
W
A
V
°C
*Storage Temperature Range
Tstg
40 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*Indicates JEDEC Registered Data.
© Semiconductor Components Industries, LLC, 2011
September, 2011 Rev. 10
1
http://onsemi.com
SILICON CONTROLLED
RECTIFIERS
0.8 A RMS, 30 200 V
G
AK
MARKING
DIAGRAM
123
TO92
CASE 29
STYLE 10
2N
50xx
YWW
50xx
Y
WW
Specific Device Code
= Year
= Work Week
PIN ASSIGNMENT
1 Cathode
2 Gate
3 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
2N5060/D


  ON Semiconductor Electronic Components Datasheet  

2N5063 Datasheet

Sensitive Gate Silicon Controlled Rectifiers

No Preview Available !

2N5060 Series
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
*Thermal Resistance, JunctiontoCase (Note 2)
RqJC
75 °C/W
Thermal Resistance, JunctiontoAmbient
RqJA
200 °C/W
2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the
curved surface.
*Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(VAK = Rated VDRM or VRRM)
TC = 25°C
TC = 110°C
ON CHARACTERISTICS
*Peak Forward OnState Voltage (Note 4)
(ITM = 1.2 A peak @ TA = 25°C)
Gate Trigger Current (Continuous DC) (Note 5)
*(VAK = 7.0 Vdc, RL = 100 W)
Gate Trigger Voltage (Continuous DC) (Note 5)
*(VAK = 7.0 Vdc, RL = 100 W)
*Gate NonTrigger Voltage
(VAK = Rated VDRM, RL = 100 W) TC = 110°C
Holding Current (Note 3)
*(VAK = 7.0 Vdc, initiating current = 20 mA)
Turn-On Time
Delay Time
Rise Time
(IGT = 1.0 mA, VD = Rated VDRM,
Forward Current = 1.0 A, di/dt = 6.0 A/ms
TC = 25°C
TC = 40°C
TC = 25°C
TC = 40°C
TC = 25°C
TC = 40°C
Turn-Off Time
(Forward Current = 1.0 A pulse,
Pulse Width = 50 ms,
0.1% Duty Cycle, di/dt = 6.0 A/ms,
dv/dt = 20 V/ms, IGT = 1 mA)
2N5060, 2N5061
2N5062, 2N5064
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage
(Rated VDRM, Exponential, RGK = 1 kW)
*Indicates JEDEC Registered Data.
3. RGK = 1000 W is included in measurement.
4. Forward current applied for 1 ms maximum duration, duty cycle p 1%.
5. RGK current is not included in measurement.
Symbol
Min Typ Max Unit
IDRM, IRRM
10 mA
50 mA
VTM − − 1.7 V
IGT mA
− − 200
− − 350
VGT − − 0.8 V
− − 1.2
VGD
V
0.1
IH − − 5.0 mA
− − 10
ms
td 3.0
tr 0.2
tq ms
dv/dt
10
30
30 V/ms
http://onsemi.com
2


Part Number 2N5063
Description Sensitive Gate Silicon Controlled Rectifiers
Maker ON Semiconductor
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2N5063 Datasheet PDF






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