
	ON Semiconductor Electronic Components Datasheet

2N5461 Datasheet

P-CHANNEL JFET

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2N5460, 2N5461, 2N5462

JFET Amplifier

P−Channel − Depletion

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain − Gate Voltage

Reverse Gate − Source Voltage

Forward Gate Current

Total Device Dissipation @ TA = 25°C

Derate above 25°C

VDG

VGSR

IG(f)

40 Vdc

10 mAdc

350 mW

2.8 mW/°C

Junction Temperature Range

TJ −65 to +135 °C

Storage Channel Temperature Range

Tstg − 65 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

http://onsemi.com

2 DRAIN

GATE

1 SOURCE

123

TO−92

CASE 29

STYLE 7

MARKING DIAGRAM

546x

AYWWG

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

March, 2006 − Rev. 5

2N546x = Device Code

x = 0, 1, or 2

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

Publication Order Number:

2N5460/D


	ON Semiconductor Electronic Components Datasheet

2N5461 Datasheet

P-CHANNEL JFET

No Preview Available !

2N5460, 2N5461, 2N5462

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min Typ Max Unit

OFF CHARACTERISTICS

Gate −Source Breakdown Voltage

(IG = 10 mAdc, VDS = 0)

Gate Reverse Current

(VGS = 20 Vdc, VDS = 0)

(VGS = 30 Vdc, VDS = 0)

(VGS = 20 Vdc, VDS = 0, TA = 100°C)

(VGS = 30 Vdc, VDS = 0, TA = 100°C)

Gate −Source Cutoff Voltage

(VDS = 15 Vdc, ID = 1.0 mAdc)

2N5460, 2N5461, 2N5462

V(BR)GSS

IGSS

2N5460

2N5461

2N5462

VGS(off)

−

0.75

1.0

1.8

−

− Vdc

5.0 nAdc

1.0 mAdc

6.0 Vdc

7.5

9.0

Gate −Source Voltage

(VDS = 15 Vdc, ID = 0.1 mAdc)

(VDS = 15 Vdc, ID = 0.2 mAdc)

(VDS = 15 Vdc, ID = 0.4 mAdc)

ON CHARACTERISTICS

Zero −Gate −Voltage Drain Current

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)

2N5460

2N5461

2N5462

VGS

2N5460

2N5461

2N5462

IDSS

Vdc

0.5 − 4.0

0.8 − 4.5

1.5 − 6.0

−1.0 − −5.0 mAdc

−2.0 − −9.0

− 4.0

−

− 16

SMALL−SIGNAL CHARACTERISTICS

Forward Transfer Admittance

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)

2N5460

2N5461

2N5462

⎪yfs⎪

1000 − 4000 mmhos

1500 − 5000

2000 − 6000

Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)

Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS

Equivalent Short−Circuit Input Noise Voltage

(VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz)

⎪yos⎪

Ciss

Crss

− − 75 mmhos

− 5.0 7.0 pF

− 1.0 2.0 pF

− 60 115 nVń ǸHz

ORDERING INFORMATION

2N5460

Device

Package

TO−92

Shipping†

2N5460G

2N5461

TO−92

(Pb−Free)

TO−92

1000 Units / Box

2N5461G

TO−92

(Pb−Free)

2N5461RLRA

2N5461RLRAG

TO−92

(Pb−Free)

2000 / Tape & Reel

2N5462

2N5462G

TO−92

(Pb−Free)

1000 Units / Box

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

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