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  ON Semiconductor Electronic Components Datasheet  

2N5486 Datasheet

JFET VHF/UHF Amplifiers

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2N5486
JFET VHF/UHF Amplifiers
N−Channel — Depletion
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain −Gate Voltage
Reverse Gate −Source Voltage
Drain Current
Forward Gate Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDG
VGSR
ID
IG(f)
PD
25 Vdc
25 Vdc
30 mAdc
10 mAdc
350 mW
2.8 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
1 DRAIN
3
GATE
2 SOURCE
TO−92 (TO−226AA)
CASE 29−11
STYLE 5
MARKING DIAGRAM
2N
5486
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 2
1
2N5486 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
2N5486
2N5486G
TO−92
TO−92
(Pb−Free)
1000 Units / Bulk
1000 Units / Bulk
Publication Order Number:
2N5486/D


  ON Semiconductor Electronic Components Datasheet  

2N5486 Datasheet

JFET VHF/UHF Amplifiers

No Preview Available !

2N5486
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
Gate Reverse Current
(IG = −1.0 mAdc, VDS = 0)
(VGS = −20 Vdc, VDS = 0)
(VGS = −20 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff Voltage
ON CHARACTERISTICS
(VDS = 15 Vdc, ID = 10 nAdc)
Zero−Gate Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
SMALL− SIGNAL CHARACTERISTICS
Forward Transfer Admittance
Input Admittance
Output Admittance
Output Conductance
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
yfs
Re(yis)
yos
Re(yos)
Re(yfs)
Ciss
Crss
Coss
Min Typ Max
Unit
−25 −
− Vdc
− − −1.0 nAdc
− 0.2
mAdc
− 2.0
− 6.0
Vdc
8.0 − 20 mAdc
4000 − 8000 mmhos
− − 1000 mmhos
− − 75 mmhos
− − 100 mmhos
3500
mmhos
− − 5.0 pF
− − 1.0 pF
− − 2.0 pF
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
10
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
5.0
bis @ IDSS
gis @ IDSS
gis @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
0.3
0.2
brs @ IDSS
0.25 IDSS
bis @ 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 1. Input Admittance (yis)
gfs @ IDSS
gfs @ 0.25 IDSS
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 3. Forward Transadmittance (yfs)
0.1
0.07
0.05
10
grs @ IDSS, 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 2. Reverse Transfer Admittance (yrs)
10
5.0
2.0 bos @ IDSS and 0.25 IDSS
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
gos @ IDSS
gos @ 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 4. Output Admittance (yos)
http://onsemi.com
2


Part Number 2N5486
Description JFET VHF/UHF Amplifiers
Maker ON Semiconductor
Total Page 6 Pages
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