
	ON Semiconductor Electronic Components Datasheet

2N6043 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

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PNP - 2N6040, 2N6042,

NPN - 2N6043, 2N6045

Plastic Medium-Power

Complementary Silicon

Transistors

Plastic medium−power complementary silicon transistors are

designed for general−purpose amplifier and low−speed switching

applications.

Features

• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

• Collector−Emitter Sustaining Voltage − @ 100 mAdc −

VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043

= 100 Vdc (Min) − 2N6042, 2N6045

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44

= 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS (Note 1)

Rating

Symbol Value

Unit

Collector−Emitter Voltage

2N6040 VCEO 60 Vdc

2N6043

2N6042

2N6045

100

Collector−Base Voltage

2N6040

2N6043

2N6042

2N6045

VCB

60 Vdc

100

Emitter−Base Voltage

Collector Current

Continuous

Peak

VEB

5.0 Vdc

8.0 Adc

Base Current

Total Power Dissipation @ TC = 25°C

Derate above 25°C

IB 120 mAdc

PD 75 W

0.60 W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg –65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Indicates JEDEC Registered Data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

www.onsemi.com

DARLINGTON, 8 AMPERES

COMPLEMENTARY SILICON

POWER TRANSISTORS

60 − 100 VOLTS, 75 WATTS

TO−220

CASE 221A

STYLE 1

MARKING DIAGRAM

2N604xG

AYWW

2N604x = Device Code

x = 0, 2, 3, or 5

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

November, 2014 − Rev. 10

Publication Order Number:

2N6040/D


	ON Semiconductor Electronic Components Datasheet

2N6043 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Ambient

Symbol

qJC

qJA

Max Unit

1.67 °C/W

57 °C/W

*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

VCEO(sus)

Vdc

2N6040, 2N6043

60 −

2N6042, 2N6045

100 −

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

(VCE = 100 Vdc, IB = 0)

2N6040, 2N6043

2N6042, 2N6045

ICEO

− 20

Collector Cutoff Current

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)

2N6040, 2N6043

2N6042, 2N6045

2N6040, 2N6043

2N6041, 2N6044

2N6042, 2N6045

ICEX

− 20

− 200

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

(VCB = 100 Vdc, IE = 0)

2N6040, 2N6043

2N6042, 2N6045

ICBO

− 20

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

IEBO

− 2.0 mAdc

DC Current Gain

(IC = 4.0 Adc, VCE = 4.0 Vdc)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

(IC = 8.0 Adc, VCE = 4.0 Vdc)

hFE −

2N6040, 2N6043,

1000 20.000

2N6042, 2N6045

1000 20,000

All Types

100 −

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 16 mAdc)

(IC = 3.0 Adc, IB = 12 mAdc)

(IC = 8.0 Adc, IB = 80 Adc)

2N6040, 2N6043,

2N6042, 2N6045

All Types

VCE(sat)

Vdc

− 2.0

− 4.0

Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)

Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

VBE(sat)

VBE(on)

− 4.5 Vdc

− 2.8 Vdc

Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

2N6040/2N6042

2N6043/2N6045

|hfe|

Cob

4.0 −

− 300 pF

− 200

Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

hfe

300 −

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

*Indicates JEDEC Registered Data.

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2N6043 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

2N6043 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

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