
	ON Semiconductor Electronic Components Datasheet

2N6107 Datasheet

Complementary Silicon Plastic Power Transistors

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2N6107, 2N6109, 2N6111 (PNP),

2N6288, 2N6292 (NPN)

Complementary Silicon

Plastic Power Transistors

These devices are designed for use in general−purpose amplifier and

switching applications.

Features

• High DC Current Gain

• High Current Gain − Bandwidth Product

• TO−220 Compact Package

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS (Note 1)

Rating

Symbol Value

Unit

Collector−Emitter Voltage

2N6111, 2N6288

2N6109

2N6107, 2N6292

VCEO

Vdc

Collector−Base Voltage

2N6111, 2N6288

2N6109

2N6107, 2N6292

VCB Vdc

Emitter−Base Voltage

Collector Current − Continuous

Collector Current − Peak

Base Current

Total Power Dissipation

@ TC = 25_C

Derate above 25_C

VEB 5.0 Vdc

IC 7.0 Adc

ICM 10 Adc

IB 3.0 Adc

40 W

0.32 W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Indicates JEDEC Registered Data.

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction−to−Case

Symbol

RqJC

Max

3.125

Unit

_C/W

www.onsemi.com

7 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

30 − 50 − 70 VOLTS, 40 WATTS

PNP

COLLECTOR 2, 4

NPN

COLLECTOR 2, 4

BASE

EMITTER 3

BASE

EMITTER 3

TO−220

CASE 221A

STYLE 1

MARKING DIAGRAM

2N6xxxG

AYWW

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

November, 2014 − Rev. 11

2N6xxx = Specific Device Code

xxx = See Table on Page 4

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 4 of this data sheet.

Publication Order Number:

2N6107/D


	ON Semiconductor Electronic Components Datasheet

2N6107 Datasheet

Complementary Silicon Plastic Power Transistors

No Preview Available !

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 100 mAdc, IB = 0)

2N6111, 2N6288

2N6109

2N6107, 2N6292

VCEO(sus)

Vdc

−

Collector Cutoff Current

(VCE = 20 Vdc, IB = 0)

2N6111, 2N6288

(VCE = 40 Vdc, IB = 0)

2N6109

(VCE = 60 Vdc, IB = 0)

2N6107, 2N6292

ICEO

−

mAdc

1.0

Collector Cutoff Current

(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)

2N6111, 2N6288

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)

2N6109

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)

2N6107, 2N6292

(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

2N6111, 2N6288

(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

2N6109

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

2N6107, 2N6292

ICEX

− 100 mAdc

− 100

− 2.0 mAdc

− 2.0

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

mAdc

1.0

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 2.0 Adc, VCE = 4.0 Vdc)

2N6107, 2N6292

(IC = 2.5 Adc, VCE = 4.0 Vdc)

2N6109

(IC = 3.0 Adc, VCE = 4.0 Vdc)

2N6111, 2N6288

(IC = 7.0 Adc, VCE = 4.0 Vdc)

All Devices

hFE

30 150

2.3 −

−

Collector−Emitter Saturation Voltage

(IC = 7.0 Adc, IB = 3.0 Adc)

Base−Emitter On Voltage

(IC = 7.0 Adc, VCE = 4.0 Vdc)

VCE(sat)

VBE(on)

−

Vdc

3.5

Vdc

3.0

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 4)

(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz)

2N6288, 2N6292

2N6107, 2N6109, 2N6111

fT MHz

4.0 −

10 −

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob pF

− 250

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)

hfe

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Indicates JEDEC Registered Data.

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

4. fT = |hfe| • ftest

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2N6107 Datasheet

Complementary Silicon Plastic Power Transistors

2N6107 Datasheet

Complementary Silicon Plastic Power Transistors

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