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2SA1705 - Bipolar Transistor

Key Features

  • Adoption of FBET process.
  • Fast switching speed Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings --60 --50 --5 --1 --2 0.9 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the d.

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Datasheet Details

Part number 2SA1705
Manufacturer onsemi
File Size 527.81 KB
Description Bipolar Transistor
Datasheet download datasheet 2SA1705 Datasheet

Full PDF Text Transcription for 2SA1705 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SA1705. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : EN3025A 2SA1705 Bipolar Transistor -50V, -1A, Low VCE(sat), PNP Single NMP http://onsemi.com Applicaitons • Voltage regulators, relay drivers, lamp driv...

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onsemi.com Applicaitons • Voltage regulators, relay drivers, lamp drivers Features • Adoption of FBET process • Fast switching speed Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings --60 --50 --5 --1 --2 0.9 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above