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2SA2127 Datasheet

Bipolar Transistor

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Ordering number : EN8022A
2SA2127
Bipolar Transistor
-50V, -2A, Low VCE(sat), PNP Single MP
http://onsemi.com
Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features
Adoption of MBIT process
High current capacity and wide ASO
Low saturation voltage
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Storage Temperature
Tstg
Conditions
Ratings
--50
--50
--6
--2
--4
--400
1
150
--55 to +150
Unit
V
V
V
A
A
mA
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7520-002
6.0 4.7
5.0
2SA2127
Product & Package Information
• Package
: MP
• JEITA, JEDEC
: SC-51, TO-92(1-WATT), TO-226AE
• Minimum Packing Quantity : 1,000 pcs./box
Marking
Electrical Connection
2
0.5
0.6
0.5 0.5
3
1
123
1.45 1.45
1 : Emitter
2 : Collector
3 : Base
MP
Semiconductor Components Industries, LLC, 2013
September, 2013
60612 TKIM/21805EA TSIM TB-00000380 No.8022-1/9


  ON Semiconductor Electronic Components Datasheet  

2SA2127 Datasheet

Bipolar Transistor

No Preview Available !

2SA2127
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB= --40V, IE=0A
VEB= --4V, IC=0A
VCE= --2V, IC= --100mA
VCE= --2V, IC= --1.5A
VCE= --10V, IC= --300mA
VCB= --10V, f=1MHz
IC= --1A, IB= --50mA
IC= --1A, IB= --50mA
IC= --10μA, IE=0A
IC= --1mA, RBE=
IE= --10μA, IC=0A
See specied Test Circuit.
Switching Time Test Circuit
PW=20μs
D.C.1%
INPUT
VR
IB1
IB2
RB
50Ω
+
100μF
VBE=5V
IC=10IB1= --10IB2= --0.5A
IC OUTPUT
RL
+
470μF
VCC= --25V
Ordering Information
Device
2SA2127
2SA2127-AE
Package
MP
MP
Shipping
500pcs./bag
1,000pcs./box
Ratings
min typ
200
40
420
16
--0.2
--0.9
--50
--50
--6
35
250
24
max
--1
--1
560
--0.4
--1.2
Unit
μA
μA
MHz
pF
V
V
V
V
V
ns
ns
ns
memo
Pb Free
No.8022-2/9


Part Number 2SA2127
Description Bipolar Transistor
Maker ON Semiconductor
Total Page 9 Pages
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