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2SA2127 - Bipolar Transistor

Features

  • Adoption of MBIT process.
  • High current capacity and wide ASO.
  • Low saturation voltage Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Storage Temperature Tstg Conditions Ratings --50 --50 --6 --2 --4 --400 1 150 --55 to +150 Unit V V V.

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Datasheet Details

Part number 2SA2127
Manufacturer onsemi
File Size 411.26 KB
Description Bipolar Transistor
Datasheet download datasheet 2SA2127 Datasheet
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Full PDF Text Transcription

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Ordering number : EN8022A 2SA2127 Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP http://onsemi.com Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of MBIT process • High current capacity and wide ASO • Low saturation voltage Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Storage Temperature Tstg Conditions Ratings --50 --50 --6 --2 --4 --400 1 150 --55 to +150 Unit V V V A A mA W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
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