2SA2197
2SA2197 is PNP / NPN Epitaxial Planar Silicon Transistors manufactured by onsemi.
Features
- Adoption of MBIT process.
- Large current capacitance.
- Low collector-to-emitter saturation voltage.
- High-speed switching.
- High allowable power dissipation.
Specifications ( ) : 2SA2197
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP IB
Tj Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance
Symbol
ICBO IEBO h FE f T Cob
Conditions
VCB=(--)30V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--)500m A VCE=(--)10V, IC=(--)500m A VCB=(--)10V, f=1MHz
Ratings (--30)40 (--)30 (--)6 (--)7 (--)9 (--)1.2 1 10 150
--55 to +150
Unit V V V A A A W W °C °C min 200
Ratings typ max
Unit
(--)0.1 µA
(--)0.1 µA
(250)290
MHz
(52)40 p F
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© 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn5se Imwiw.cwo.omnsemi.
Publication Order Number: 2SA2197_2SC6102/D
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