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2SB1121 - Bipolar Transistor

Features

  • Adoption of FBET, MBIT processes.
  • Low collector to emitter saturation voltage.
  • Large current capacity and wide SOA.
  • Fast switching speed.
  • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage VCBO VCEO VEBO Collector Current Collector Current (Pulse) IC ICP Package.

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Datasheet Details

Part number 2SB1121
Manufacturer onsemi
File Size 187.84 KB
Description Bipolar Transistor
Datasheet download datasheet 2SB1121 Datasheet
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Full PDF Text Transcription

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Ordering number : EN1787C 2SB1121 Bipolar Transistor -25V, -2A, Low VCE(sat) PNP Single PCP http://onsemi.com Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity and wide SOA • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage VCBO VCEO VEBO Collector Current Collector Current (Pulse) IC ICP Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 2SB1121S-TD-E 2SB1121T-TD-E 1.
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