2SC4614 - Bipolar Transistor

ON Semiconductor

Datasheet Details

http://onsemi. com Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (--)180 (--)160 (--)6 (--)1.5 (--)2.5 1 150 --55 to +150 Unit V V V.

📁 2SC4614 Similar Datasheet

2SC461 - Silicon NPN Transistor (Hitachi Semiconductor)
2SC4612 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SC4613 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SC4615 - NPN TRANSISTOR (Sanyo Semicon Device)
2SC4616 - NPN TRANSISTOR (Sanyo Semicon Device)
2SC4617 - NPN TRANSISTOR (Motorola Inc)
2SC4617-Q - NPN Transistor (MCC)
2SC4617-R - NPN Transistor (MCC)

Other Datasheets by ON Semiconductor

Published: Apr 22, 2014 |