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2SC5277A - RF Transistor

Features

  • Low-noise : NF=0.9dB typ (f=1GHz).
  • High gain : NF=1.4dB typ (f=1.5GHz) : ⏐S21e⏐2=10dB typ (f=1.5GHz).
  • High cut-off frequency : fT=8GHz typ.
  • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : ⏐S21e⏐2=5.5dB typ (f=1.5GHz).
  • Ultrasmall-sized package permitting applied sets to be made small and slim Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emit.

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Datasheet Details

Part number 2SC5277A
Manufacturer onsemi
File Size 410.74 KB
Description RF Transistor
Datasheet download datasheet 2SC5277A Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1075A 2SC5277A RF Transistor 10V, 30mA, fT=8GHz, NPN Single SMCP http://onsemi.com Features • Low-noise : NF=0.9dB typ (f=1GHz) • High gain : NF=1.4dB typ (f=1.5GHz) : ⏐S21e⏐2=10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : ⏐S21e⏐2=5.5dB typ (f=1.5GHz) • Ultrasmall-sized package permitting applied sets to be made small and slim Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions Ratings 20 10 1.
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