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2SC6082 - Bipolar Transistor

Key Features

  • Adoption of MBIT process.
  • Low collector-to-emitter saturation voltage.
  • Large current capacitance.
  • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current VCBO VCES VCEO VEBO IC ICP IB Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions PW≤10μs, duty.

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Datasheet Details

Part number 2SC6082
Manufacturer onsemi
File Size 178.43 KB
Description Bipolar Transistor
Datasheet download datasheet 2SC6082 Datasheet

Full PDF Text Transcription for 2SC6082 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SC6082. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : ENA0279B 2SC6082 Bipolar Transistor 50V, 15A, Low VCE (sat) NPN TO-220F-3SG http://onsemi....

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/onsemi.