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  ON Semiconductor Electronic Components Datasheet  

2SC6094 Datasheet

Bipolar Transistor

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Ordering number : ENA0410A
2SC6094
Bipolar Transistor
60V, 3A, Low VCE(sat), NPN Single PCP
http://onsemi.com
Applicaitons
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter
Features
Adoption of FBET, MBIT process
Low collector-to-emitter saturation voltage
High allowable power dissipation
Large current capacity
High-speed switching
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
VCBO
VCES
VCEO
VEBO
IC
ICP
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SC6094-TD-E
1.5
Conditions
Ratings
Unit
100 V
100 V
60 V
6.5 V
3A
5A
Continued on next page.
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
0.4
0.5
2
1.5
3.0
3
0.4
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
TD
Electrical Connection
2
1
3
Semiconductor Components Industries, LLC, 2013
September, 2013
82912 TKIM/53006EA MSIM TB-00002379 No. A0410-1/7


  ON Semiconductor Electronic Components Datasheet  

2SC6094 Datasheet

Bipolar Transistor

No Preview Available !

2SC6094
Continued from preceding page.
Parameter
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
IB
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm2×0.8mm)
Tc=25°C
Ratings
600
1.3
3.5
150
--55 to +150
Unit
mA
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=50V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=100mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
IC=1A, IB=50mA
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10μA, IE=0A
IC=100μA, RBE=0Ω
IC=1mA, RBE=
IE=10μA, IC=0A
See specied Test Circuit.
Switching Time Test Circuit
PW=20μs
D.C.1%
IB1
IB2
OUTPUT
INPUT VR10
RB
RL
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=30V
IC=10IB1= --10IB2=0.5A
Ratings
min typ
300
390
18
90
80
0.84
100
100
60
6.5
35
680
24
max
1
1
600
135
120
1.2
Unit
μA
μA
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
Ordering Information
Device
2SC6094-TD-E
Package
PCP
Shipping
1,000pcs./reel
memo
Pb Free
No. A0410-2/7


Part Number 2SC6094
Description Bipolar Transistor
Maker ON Semiconductor
Total Page 7 Pages
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