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  ON Semiconductor Electronic Components Datasheet  

2SD1062 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

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2SB826 / 2SD1062
Ordering number : EN723I
2SB826 / 2SD1062 PNP / NPN Epitaxial Planar Silicon Transistors
50V / 12A Switching Applications
Applications
Relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Features
Low-saturation collector-to-emitter voltage : VCE(sat)= --0.5V(PNP), 0.4V(NPN) max.
Wide ASO leading to high resistance to breakdown.
Specifications ( ) : 2SB826
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
Ratings
(--)60
(--)50
(--)6
(--)12
(--)15
1.75
40
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Ratings
min typ max
Unit
(--)0.1 mA
(--)0.1 mA
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
2SB826_2SD1062/D


  ON Semiconductor Electronic Components Datasheet  

2SD1062 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

No Preview Available !

2SB826 / 2SD1062
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
hFE1
hFE2
fT
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=(--)2V, IC=(--)1A
VCE=(--)2V, IC=(--)5A
VCE=(--)5V, IC=(--)1A
IC=(--)6A, IB=(--)0.3A
IC=(--)1mA, IE=0A
IC=(--)1mA, RBE=
IE=(--)1mA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
* : The 2SB826 / 2SD1062 are classified by 1A hFE as follows :
Rank
Q
R
S
hFE 70 to 140 100 to 200 140 to 280
min
70*
30
Ratings
typ
10
(--)60
(--)50
(--)6
(0.2)0.1
(0.4)1.2
(0.1)0.05
max
280*
(--0.5)0.4
Unit
MHz
V
V
V
V
µs
µs
µs
Package Dimensions
unit : mm (typ)
7507-001
10.2
5.1
3.6
4.5
1.3
1.2
0.8
123
2.55 2.55
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
Switching Time Test Circuit
PW=20µs
tr, tf 15ns
IB1
IB2
OUTPUT
INPUT
VR
100
50
RB
1
+
1µF
RL
4Ω
+
F
VBE= --5V
VCC=20V
IC=10IB1= --10IB2=5A
For PNP, the polarity is reversed.
IC -- VCE
--16
--14
--12
--1A
--800mA
--600mA--400mA
2SB826
--10
--200mA
--8
--6 --100mA
--80mA
--60mA
--4 --40mA
--2 --20mA
0 IB=0mA
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Collector-to-Emitter Voltage, VCE -- V ITR08461
IC -- VCE
16
400mA
2SD1062
14
12
200mA
10
8 100mA
80mA
6 60mA
40mA
4
20mA
2
0 IB=0mA
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector-to-Emitter Voltage, VCE -- V ITR08462
Rev.0 I Page 2 of 4 I www.onsemi.com


Part Number 2SD1062
Description PNP / NPN Epitaxial Planar Silicon Transistors
Maker ON Semiconductor
Total Page 4 Pages
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