* FBET and MBIT processed (Original process of SANYO).
* Low saturation voltage.
* Large current capacity and wide ASO. Specifications ( ) : 2SB892 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage C
2SD1207
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Pnp / npn epitaxial planar silicon transistors.
2SB892 / 2SD1207 Ordering number : EN930D 2SB892 / 2SD1207 PNP / NPN Epitaxial Planar Silicon Transistors Large-Current Switching Applications Appl.
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