Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted.
Large current capacity and highly resistant to breakdown.
Excellent linearity of hFE in the region from low current to high current.
Ultrasmall size supports high-density, ultrasmall-sized hybrid IC designs
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitt.
Full PDF Text Transcription for 2SD1620 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SD1620. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : EN1719D 2SD1620 Bipolar Transistor 10V, 3A, Low VCE(sat), NPN Single PCP http://onsemi.com Features • Less power dissipation because of low VCE(sat), pe...
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semi.com Features • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted • Large current capacity and highly resistant to breakdown • Excellent linearity of hFE in the region from low current to high current • Ultrasmall size supports high-density, ultrasmall-sized hybrid IC designs Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEX VCEO VEBO IC ICP Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1
2SD1620 Datasheet
