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  ON Semiconductor Electronic Components Datasheet  

2SD1626 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

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2SB1126 / 2SD1626
Ordering number : EN1721B
2SB1126 / 2SD1626 PNP / NPN Epitaxial Planar Silicon Transistors
For Various Drivers
Applications
Relay drivers, hammer drivers, lamp drivers, motor drivers.
Features
High DC current gain (4000 or greater).
Large current capacity.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications ( ) : 2SB1126
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Mounted on a ceramic board (250mm20.8mm)
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Marking 2SB1126 : BI
2SD1626 : DI
Symbol
ICBO
IEBO
Conditions
VCB=(--)40V, IE=0A
VEB=(--)8V, IC=0A
min
Ratings
(--)80
(--)50
(--)10
(--)1.5
(--)3
500
1.5
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Ratings
typ
max
Unit
(--)100 nA
(--)100 nA
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
2SB1126_2SD1626/D


  ON Semiconductor Electronic Components Datasheet  

2SD1626 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

No Preview Available !

Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SB1126 / 2SD1626
Symbol
Conditions
hFE1
hFE2
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE=(--)2V, IC=(--)500mA
VCE=(--)2V, IC=(--)10mA
VCE=(--)10V, IC=(--)50mA
IC=(--)500mA, IB=(--)0.5mA
IC=(--)500mA, IB=(--)0.5mA
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10µA, IC=0A
Package Dimensions
unit : mm (typ)
7007B-004
min
4000
3000
(--)80
(--)50
(--)10
Ratings
typ
120
(--)0.9
(--)1.5
max
(--)1.5
(--)2.0
Unit
MHz
V
V
V
V
V
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
IC -- VCE
--0.0-8-m0.A06mA
--0.04mA
--0.02mA
2SB1126
IC -- VCE
1.6
1.4
1.2
0.08mA
0.06mA
1.0 0.04mA
0.8
0.6
0.02mA
0.4
2SD1626
IB=0mA
--2 --4 --6 --8 --10 --12
Collector-to-Emitter Voltage, VCE -- V ITR08937
0.2
0 IB=0mA
0 2 4 6 8 10 12
Collector-to-Emitter Voltage, VCE -- V ITR08938
Rev.0 I Page 2 of 4 I www.onsemi.com


Part Number 2SD1626
Description PNP / NPN Epitaxial Planar Silicon Transistors
Maker ON Semiconductor
Total Page 4 Pages
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