2SD600 - PNP / NPN Epitaxial Planar Silicon Transistors

Product Overview

ON Semiconductor

Part number	2SD600
Manufacturer	ON Semiconductor
File Size	94.38 KB
Description	PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet	2SD600 Datasheet
Additional preview pages of the 2SD600 datasheet.

High breakdown voltage VCEO 100/120V, High current 1A.
Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SB631, 631K Specifications 12 3 2.4 4.8 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Co.

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Published: Sep 17, 2016 |