Input capacitance Ciss=4200pF (typ. )
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse).
Full PDF Text Transcription for 2SJ665 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SJ665. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : EN8590A 2SJ665 P-Channel Power MOSFET –100V, –27A, 77mΩ, TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=59mΩ(typ.) • 4V drive • Input cap...
View more extracted text
om Features • ON-resistance RDS(on)1=59mΩ(typ.) • 4V drive • Input capacitance Ciss=4200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--30V, L=100μH, IAV=--27A (Fig.1) *2 L≤100μH, single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --100 ±20 --27 --108 65 150 --55 to +150 48 --27 Unit V V A A W °C °C mJ A Stresses exceeding
2SJ665 Datasheet
