4V drive. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature
Symbol VDSS VGSS
ID IDP
PD
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2✕0.8mm) Tc=25°C
Ratings 60
±20 2 8 1
3.5 150 --55 to +150
Unit V V A A W W °C °C
Elect.
Full PDF Text Transcription for 2SK3944 (Reference)
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2SK3944. For precise diagrams, and layout, please refer to the original PDF.
2SK3944 Ordering number : ENN8330 2SK3944 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching...
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Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2✕0.8mm) Tc=25°C Ratings 60 ±20 2 8 1 3.
2SK3944 Datasheet
