Input capacitance Ciss=750pF
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain to Source Voltage
VDSS
600 V
Gate to Source Voltage
VGSS
±30 V
Drain Current (DC)
IDc.
1 IDpack.
2
Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition).
3
8.5 A 6.9 A
Drain Current (Pulse)
IDP PW≤10μs, duty cycle≤1%
34 A
Allowab.
Full PDF Text Transcription for 2SK4099LS (Reference)
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2SK4099LS. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENA0777C 2SK4099LS N-Channel Power MOSFET 600V, 8.5A, 0.94Ω, TO-220F-3FS http://onsemi.com Features • ON-resistance RDS(on)=0.72Ω (typ.) • 10V drive • I...
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semi.com Features • ON-resistance RDS(on)=0.72Ω (typ.) • 10V drive • Input capacitance Ciss=750pF Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3 8.5 A 6.9 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 34 A Allowable Power Dissipation PD Tc=25°C (Our ideal heat dissipation condition)*3 2.
2SK4099LS Datasheet
