2SK4197FS - N-Channel Power MOSFET

onsemi

Key Features

ON-reistance RDS(on)=2.5Ω(typ. ).
Input capacitance Ciss=260pF(typ. ).
10V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) VDSS VGSS ID IDL IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 Avalanche Current.
2 EAS IAV Note :.

2SK4197FS n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	2SK4197FS
Manufacturer	onsemi
File Size	143.02 KB
Description	N-Channel Power MOSFET
Datasheet	2SK4197FS Datasheet

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Ordering number : ENA1368B 2SK4197FS N-Channel Power MOSFET 600V, 3.5A, 3.25Ω, TO-220F-3FS http://onsemi.com Features • ON-reistance RDS(on)=2.5Ω(typ.) • Input capacitance Ciss=260pF(typ.) • 10V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) VDSS VGSS ID IDL IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 EAS IAV Note :*1 VDD=50V, L=5mH, IAV=3.3A (Fig.1) *2 L≤5mH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C TO-220F-3FS Ratings 600 ±30 3.5 3.3 13 2.0 28 150 --55 to +150 29 3.