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2SK4198FS - N-Channel Power MOSFET

Key Features

  • ON-resistance RDS(on)=1.8Ω (typ. ).
  • 10V drive.
  • Input capacitance Ciss=360pF (typ. ).
  • Repetitive avalanche guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS IDc.
  • 1 IDpack.
  • 2 IDP Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition).
  • 3 PW≤10μs, duty cycle≤1%.

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Datasheet Details

Part number 2SK4198FS
Manufacturer onsemi
File Size 181.96 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2SK4198FS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1370C 2SK4198FS N-Channel Power MOSFET 600V, 5A, 2.34Ω, TO-220F-3FS http://onsemi.com Features • ON-resistance RDS(on)=1.8Ω (typ.) • 10V drive • Input capacitance Ciss=360pF (typ.) • Repetitive avalanche guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS IDc *1 IDpack *2 IDP Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% 600 V ±30 V 5A 4A 18 A Allowable Power Dissipation PD Tc=25°C (Our ideal heat dissipation condition)*3 2.