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4N36M Datasheet

Manufacturer: onsemi

This datasheet includes multiple variants, all published together in a single manufacturer document.

4N36M datasheet preview

Datasheet Details

Part number 4N36M
Datasheet 4N36M 4N35M Datasheet (PDF)
File Size 328.95 KB
Manufacturer onsemi
Description Phototransistor Optocouplers
4N36M page 2 4N36M page 3

4N36M Overview

The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6−pin dual−in−line package.

4N36M Key Features

  • Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V
  • 10% for 4N27M and 4N28M
  • 20% for 4N25M and 4N26M
  • 100% for 4N35M and 4N36M and 4N37M
  • Safety and Regulatory Approvals
  • UL1577, 4,170 VACRMS for 1 Minute
  • DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage

4N36M from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Fairchild Semiconductor Logo 4N36M Phototransistor Optocoupler Fairchild Semiconductor
QT-BRIGHTEK 4N36 6-PIN PHOTOTRANSISTOR OPTOCOUPLER QT-BRIGHTEK
Fairchild Semiconductor Logo 4N36 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS Fairchild Semiconductor
Motorola  Inc Logo 4N36 6-Pin DIP Optoisolators Motorola Inc
Toshiba Semiconductor Logo 4N36 PHOTO TRANSISTOR Toshiba Semiconductor
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More Datasheets from onsemi

See all onsemi datasheets

Part Number Description
4N35 6-Pin General Purpose Phototransistor Optocouplers
4N35M Phototransistor Optocouplers
4N37M Phototransistor Optocouplers
4N38M 6-Pin DIP High Voltage Phototransistor Optocouplers

4N36M Distributor

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