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5LN01S - N-Channel Small Signal MOSFET

Key Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 1.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V.
  • ”, so please take care when handling.
  • Machine Model Rating.

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Datasheet Details

Part number 5LN01S
Manufacturer onsemi
File Size 166.23 KB
Description N-Channel Small Signal MOSFET
Datasheet download datasheet 5LN01S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN6561C 5LN01S N-Channel Small Signal MOSFET 50V, 0.1A, 7.8Ω, Single SMCP http://onsemi.com Features • Low ON-resistance • Ultrahigh-speed switching • 1.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings 50 ±10 0.1 0.4 0.15 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.