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  ON Semiconductor Electronic Components Datasheet  

5LP01M Datasheet

P-Channel Small Signal MOSFET

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Ordering number : EN6135C
5LP01M
P-Channel Small Signal MOSFET
–50V, –0.07A, 23Ω, Single MCP
http://onsemi.com
Features
Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW10μs, duty cycle1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
--50
±10
--0.07
--0.28
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7023A-010
2.0 0.15
3
5LP01M-TL-E
5LP01M-TL-H
Ordering & Package Information
Device
Package
Shipping
5LP01M-TL-E
MCP
SC-70, SOT-323
3,000
pcs./reel
5LP01M-TL-H
MCP
SC-70, SOT-323
3,000
pcs./reel
memo
Pb-Free
Pb-Free
and
Halogen Free
0 to 0.08
Packing Type: TL
Marking
12
0.65 0.3
1 : Gate
2 : Source
3 : Drain
MCP
TL
Electrical Connection
3
LOT No.
XB
LOT No.
1
2
Semiconductor Components Industries, LLC, 2013
July, 2013
72413 TKIM TC-00002970/71112 TKIM/42006PE MSIM TB-00002113/31000 TS (KOTO) TA-2040 No.6135-1/6


  ON Semiconductor Electronic Components Datasheet  

5LP01M Datasheet

P-Channel Small Signal MOSFET

No Preview Available !

5LP01M
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID= --1mA, VGS=0V
VDS= --50V, VGS=0V
VGS=±8V, VDS=0V
VDS= --10V, ID= --100μA
VDS= --10V, ID= --40mA
ID= --40mA, VGS= --4V
ID= --20mA, VGS= --2.5V
ID= --5mA, VGS= --1.5V
VDS= --10V, f=1MHz
See specied Test Circuit.
VDS= --10V, VGS= --10V, ID= --70mA
IS= --70mA, VGS=0V
Switching Time Test Circuit
0V VIN
--4V
VIN
PW=10μs
D.C.1%
VDD= --25V
ID= --40mA
RL=625Ω
D VOUT
G
5LP01M
P.G 50Ω S
min
--50
Ratings
typ
--0.4
70
100
18
20
30
7.4
4.2
1.3
20
35
160
150
1.40
0.16
0.23
--0.85
max
--1
±10
--1.4
23
28
60
--1.2
Unit
V
μA
μA
V
mS
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
No.6135-2/6


Part Number 5LP01M
Description P-Channel Small Signal MOSFET
Maker ON Semiconductor
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5LP01M Datasheet PDF






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