Description | NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • • http://onsemi.com V(BR)DSS 24 V RDS(on) TYP 8.4 mW @ 10 V ID MAX 65 A Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Pb−Free Packages are Available* D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter ... |
Features |
• • • • • http://onsemi.com V(BR)DSS 24 V RDS(on) TYP 8.4 mW @ 10 V ID MAX 65 A Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Pb−Free Packages are Available* D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain−to−Source Voltage Gate... |
Datasheet | 65N02R Datasheet - 98.14KB |