65N02R Description
NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK.
65N02R Key Features
- Continuous Thermal Resistance
- Junction-to-Case Total Power Dissipation @ TC = 25°C Drain Current
- Continuous @ TC = 25°C, Chip Continuous @ TC =25°C, Limited by Package Single Pulse (tp = 10 ms) Thermal Resistance
- Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current
- Continuous @ TA = 25°C Thermal Resistance
- Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current
- Continuous @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
- Rev. 6