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75345P - N-Channel Power MOSFET

Download the 75345P datasheet PDF. This datasheet also covers the 75345G variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N

the innovative UltraFET process.

resistance per silicon area, resulting in outstanding performance.

Key Features

  • 75 A, 55 V.
  • Simulation Models.
  • Temperature Compensated PSPICEt and SABER® Models.
  • Thermal Impedance SPICE and SABER Models.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • These Devices are Pb.
  • Free www. onsemi. com VDSS 55 V RDS(ON) MAX 7 mW D ID MAX 75 A G S DRAIN (TAB) TO.
  • 247.
  • 3 CASE 340CK G D S GDS DRAIN (FLANGE) TO.
  • 220.
  • 3 CASE 340AT DRAIN (FLANGE) G S D2PAK.
  • 3 CASE 418AJ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (75345G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 75345P
Manufacturer onsemi
File Size 598.04 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 75345P Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
7534 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER Mitsubishi
75343G N-Channel MOSFET Fairchild Semiconductor
75343P N-Channel MOSFET Fairchild Semiconductor
75343S N-Channel MOSFET VBsemi
75343S N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
75345G N-Channel Power MOSFET
75345S N-Channel Power MOSFET
75329D N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low−voltage bus switches, and power management in portable and battery−operated products.