A2222 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of MBIT process.
Large current capacity (IC=--10A).
Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ. )).
High-speed switching (tf=22ns(typ. )) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP.

📁 A2222 Similar Datasheet

Other Datasheets by ON Semiconductor

Published: Dec 24, 2020 |