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  ON Semiconductor Electronic Components Datasheet  

A2222SG Datasheet

Bipolar Transistor

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Ordering number : ENA1799B
2SA2222SG
Bipolar Transistor
–50V, –10A, Low VCE(sat) PNP TO-220F-3FS
http://onsemi.com
Applications
Relay drivers, lamp drivers, motor drivers
Features
Adoption of MBIT process
Large current capacity (IC=--10A)
Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.))
High-speed switching (tf=22ns(typ.))
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C, PT1s
Conditions
Ratings
Unit
--50
V
--50
V
--6
V
--10
A
--13
A
--2
A
25
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7528-003
10.16
3.18
4.7
2.54
2SA2222SG
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54
2.54
2.76
0.5
1 : Base
2 : Collector
3 : Emitter
TO-220F-3FS
A2222
SG LOT No.
1
3
Semiconductor Components Industries, LLC, 2013
September, 2013
D2612 TKIM TC-00002860/82212 TKIM/72110FA TKIM TC-00002380 No. A1799-1/7


  ON Semiconductor Electronic Components Datasheet  

A2222SG Datasheet

Bipolar Transistor

No Preview Available !

2SA2222SG
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=--40V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--270mA
VCE=--10V, IC=--1A
VCB=--10V, f=1MHz
IC=--6A, IB=--300mA
IC=--6A, IB=--300mA
IC=--100μA, IE=0A
IC=--1mA, RBE=
IE=--100μA, IC=0A
See specied Test Circuit.
Switching Time Test Circuit
PW=20μs
IB1
D.C.1%
IB2
INPUT
VR RB
50Ω
+
100μF
+
470μF
OUTPUT
RL
VBE=5V
VCC= --20V
IC=20IB1= --20IB2= --5A
Ordering Information
Device
2SA2222SG
Package
TO-220F-3FS
Shipping
50pcs./magazine
Ratings
min
typ
150
230
115
--250
--50
--50
--6
40
240
22
max
--10
--10
450
--500
--1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
ns
ns
ns
memo
Pb Free
No. A1799-2/7


Part Number A2222SG
Description Bipolar Transistor
Maker ON Semiconductor
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A2222SG Datasheet PDF






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