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AFGHL30T65RQDN - IGBT

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operation.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.57 V (Typ. ) @ IC = 30 A.
  • 100% of the Parts Tested for ILM (Note 2).
  • High Input Impedance.
  • Fast Switching.
  • Tightened Parameter Distribution.
  • This Device is Pb.
  • Free and RoHS Compliant Typical.

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Full PDF Text Transcription for AFGHL30T65RQDN (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AFGHL30T65RQDN. For precise diagrams, and layout, please refer to the original PDF.

IGBT for Automotive Application 650 V, 30 A AFGHL30T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for auto...

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nsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.57 V (Typ.

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